| PART |
Description |
Maker |
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HYMD18M725AL6-K HYMD18M725AL6-H HYMD18M725A6-H HYM |
SDRAM|DDR|8MX72|CMOS|DIMM|200PIN|PLASTIC
8M X 72 DDR DRAM MODULE, 0.75 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
8M X 72 DDR DRAM MODULE, 0.8 ns, DMA200 67.60 X 31.75 X 1 MM, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| KMM466F404BS2 |
4M x 64 DRAM SODIMM(4M x 64 ?ㄦ?RAM妯″?)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYMP564S64BP6-S5 HYMP564S64BP6-Y5 HYMP532S64BLP6-Y |
64M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| HYM71V8M655BLT6-S HYM71V8M655BT6-S |
8M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 SODIMM-144
|
Hynix Semiconductor, Inc.
|
| MSC23CV23218D-60BS4 |
2M X 32 FAST PAGE DRAM MODULE, 60 ns, DMA72 PLASTIC, SODIMM-72
|
Oki Electric Industry Co., Ltd.
|
| HYM71V8M755HCFU6-S |
8M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 MICRO, SODIMM-144
|
Hynix Semiconductor, Inc.
|
| HYMP112S64P8-C4 HYMP112S64P8-Y5 |
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| M2N1G64TU8HB0B-3C |
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Nanya Technology, Corp.
|
| HYMP125S64CP6-S5 HYMP125S64CP6-S6 HYMP125S64CP6-Y5 |
256M X 64 DDR DRAM MODULE, 0.4 ns, DMA200 ROHS COMPLIANT, SODIMM-200
256M X 64 DDR DRAM MODULE, 0.45 ns, DMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| MC-458CA721XSA MC-458CA721XSA-A80 MC-458CA721ESA |
8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
8M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 SODIMM-144
|
Elpida Memory, Inc.
|
|
